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IXFN48N50Q Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXFN48N50Q
Description  HiPerFET Power MOSFETs Q-Class
PDF  4 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN48N50Q Datasheet(HTML) 1 Page - IXYS Corporation

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© 2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
500
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MΩ
500
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C = 25°C
44N50
44
A
48N50
48
A
I
DM
T
C = 25°C, pulse width limited by TJM
44N50
176
A
48N50
192
A
I
AR
T
C = 25°C48
A
E
AR
T
C = 25°C
60
mJ
E
AS
2.5
mJ
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
15
V/ns
T
J ≤ 150°C, RG = 2 Ω
P
D
T
C = 25°C
500
W
T
J
-55 to +150
°C
T
JM
150
°C
T
stg
-55 to +150
°C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL≤ 1 mA
t = 1 s
3000
V~
M
d
Mounting torque
1.5/13
Nm/lb.in.
Terminal connection torque
1.5/13
Nm/lb.in.
Weight
30
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g, High dv/dt
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS = 0 V, ID = 1 mA
500
V
V
GS(th)
V
DS = VGS, ID = 4 mA
2.0
4.0
V
I
GSS
V
GS = ±20 VDC, VDS = 0
±100
nA
I
DSS
V
DS = VDSS
T
J
= 25
°C
100
µA
V
GS = 0 V
T
J
= 125
°C2
mA
R
DS(on)
V
GS = 10 V, ID = 0.5 ID25
44N50
120
Ω
48N50
100
Ω
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
HiPerFETTM
Power MOSFETs
Q-Class
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
Features
• IXYS advanced low Q
g process
• Low gate charge and capacitances
- easier to drive
-faster switching
• Unclamped Inductive Switching (UIS)
rated
• Low R
DS (on)
• Fast intrinsic diode
• International standard package
• miniBLOC with Aluminium nitride
isolation for low thermal resistance
• Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0
flammability classification
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
G = Gate
D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
V
DSS
I
D25
R
DS(on)
IXFN 44N50Q
500 V 44 A 120 m
Ω
Ω
Ω
Ω
Ω
IXFN
48N50Q
500 V 48 A 100 m
Ω
Ω
Ω
Ω
Ω
t
rr ≤
≤≤≤≤ 250 ns
DS98715B(08/03)


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