IXFN140N30P datasheet(1/5 Pages) IXYS

Part #	IXFN140N30P

Description	Polar Power MOSFET HiPerFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

DS99571F(05/08)

PolarTM Power MOSFET

HiPerFETTM

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFN140N30P

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

300

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.0

V

I

GSS

V

GS = ±20V, VDS = 0V

±200

nA

I

DSS

V

DS = VDSS

25

μA

V

GS = 0V

T

J = 125°C

1

mA

R

DS(on)

V

GS = 10V, ID = 70A, Note 1

20

24

m

Ω

V

DSS

= 300V

I

D25

= 110A

R

DS(on)

≤≤≤≤≤ 24mΩ

Ω

t

rr

≤≤≤≤≤ 200ns

S

G

S

D

miniBLOC, SOT-227 B

E153432

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

300

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

300

V

GSS

Continuous

±20

V

GSM

Transient

± 30

V

I

D25

T

C = 25°C

110

A

I

LRMS

External lead current limit

100

A

I

DM

T

C = 25°C, pulse width limited by TJM

300

A

I

A

T

C = 25°C70

A

E

AS

T

C = 25°C5

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

20

V/ns

P

D

T

C = 25°C

700

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1min

2500

V~

I

ISOL ≤ 1mA

t = 1s

3000

V~

M

d

Mounting torque

1.5/13

Nm/lb.in.

Terminal connection torque

1.3/11.5

Nm/lb.in.

Weight

30

g

Features

• Fast intrinsic diode

• Avalanche Rated

• Low R

DS(ON) and QG

• Low package inductance

Advantages

• Easy to mount

• Space savings

• High power density

Applications

• DC-DC coverters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC and DC motor control

• Uninterrupted power supplies

• High speed power switching

applications

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