IXFP3N50PM datasheet(1/2 Pages) IXYS

Part #	IXFP3N50PM

Description	PolarHV HiPerFET Power MOSFET

PDF	2 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 2 page

DS99509E(04/06)

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA

500

V

GS(th)

V

DS = VGS, ID = 250 µA

3.0

5.5

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

5

µA

V

GS = 0 V

T

J = 125° C

200

µA

R

DS(on)

V

GS = 10 V, ID = 1.8 A

2.0

Ω

Note 1

PolarHVTM HiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFP 3N50PM

V

DSS

= 500 V

I

D25

= 2.7 A

R

DS(on) ≤

≤≤≤≤ 2.0 Ω

Ω

t

rr

≤≤≤≤≤ 200 ns

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

° C to 150° C

500

V

DGR

T

J

= 25

° C to 150° C; R

GS = 1 MΩ

500

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25° C

2.7

A

I

DM

T

C = 25° C, pulse width limited by TJM

8A

I

AR

T

C = 25° C3

A

E

AR

T

C = 25° C10

mJ

E

AS

T

C = 25° C

100

mJ

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

10

V/ns

T

J

≤150° C, R

G = 50 Ω

P

D

T

C = 25° C36

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

4g

G = Gate

D = Drain

S = Source

Features

l Plastic overmolded tab for electrical

isolation

l Fast intrinsic diode

l International standard package

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

OVERMOLDED TO-220

(IXTP...M) OUTLINE

G

D S

Isolated Tab

(Electrically Isolated Tab)

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