IXFC14N60P datasheet(1/5 Pages) IXYS

Part #	IXFC14N60P

Description	PolarHV HiPerFET Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

600

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

600

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C8

A

I

DM

T

C = 25°C, pulse width limited by TJM

42

A

I

A

T

C = 25°C14

A

E

AS

T

C = 25°C

900

mJ

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

125

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

V

ISOL

50/60 Hz, RMS

t = 1min

2500

V~

I

ISOL ≤ 1mA

t = 1s

3000

V~

M

d

Mounting force

11..66 / 2.5..14.6

N/lb.

Weight

2

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

600

V

GS(th)

V

DS = VGS, ID = 2.5mA

3.0

5.5

V

I

GSS

V

GS = ±30V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS

5

μA

V

GS = 0V

T

J = 125°C

500 μA

R

DS(on)

V

GS = 10V, ID = 7A, Note 1

630 m

Ω

PolarHVTM HiPerFET

Power MOSFET

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFC14N60P

V

DSS

= 600V

I

D25

= 8A

R

DS(on) ≤

≤≤≤≤ 630mΩ

Ω

DS99409F(12/08

)

t

rr

≤≤≤≤≤ 200ns

Features

UL recognized package

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Avanlache rated

Fast intrinsic diode

Advantages

Easy to mount

Space savings

High power density

Applications:

Switched-mode and resonant-mode

power supplies

DC-DC Converters

Laser Drivers

AC and DC motor drives

Robotics and servo controls

G = Gate

D = Drain

S = Source

G

D

S

ISOPLUS 220TM

E153432

Isolated Tab

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