IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFH52N50P2

IXFT52N50P2

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

e

∅ P

TO-247 Outline

1

2

3

Terminals: 1 - Gate

2 - Drain

3 - Source

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

TO-268 Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

4 - Drain

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

30

48

S

C

iss

6800

pF

C

oss

V

GS

= 0V, V

695

pF

C

rss

76

pF

t

d(on)

22

ns

t

r

10

ns

t

d(off)

46

ns

t

f

8

ns

Q

g(on)

113

nC

Q

gs

V

30

nC

Q

gd

43

nC

R

thJC

0.13

°C/W

R

thCS

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

52

A

I

SM

Repetitive, Pulse Width Limited by T

JM

208

A

V

SD

I

1.3

V

t

rr

250

ns

I

RM

14

A

Q

RM

1.27

μC

I

V

Resistive Switching Times

V

R