IXFL38N100Q2 datasheet(1/4 Pages) IXYS

Part #	IXFL38N100Q2

Description	HiPerFET Power MOSFET Q2-Class

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 1mA

1000

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.5

V

I

GSS

V

GS = ±30 V, VDS = 0V

± 200 nA

I

DSS

V

DS = VDSS

100

μA

V

GS = 0V

T

J = 125°C

5 mA

R

DS(on)

V

GS = 10V, ID = 19A, Note 1

280 m

Ω

DS99512A(05/08)

HiPerFETTM

Power MOSFET

Q2-Class

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g, Low Intrinsic RG

High dV/dt, Low t

rr

IXFL38N100Q2

V

DSS

=

1000V

I

D25

=

29A

R

DS(on) ≤

≤≤≤≤

280m

Ω

t

rr

≤≤≤≤≤

300ns

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1000

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C29

A

I

DM

T

C = 25°C, pulse width limited by TJM

152

A

I

A

T

C = 25°C38

A

E

AS

T

C = 25°C5

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

20

V/ns

P

D

T

C = 25°C

380

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

F

C

Mounting force

30..120/6.7..27

N/lbs

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

3000

V~

Weight

10

g

ISOPLUS264TM( IXFL)

G

D

S

Isolated Tab

G = Gate

D = Drain

S = Source

Features

Electrically isolated mounting tab

Double metal process for low gate

resistance

Unclamped Inductive Switching

(UIS) rated

Low package inductance

- easy to drive and to protect

Fast intrinsic diode

Applications

DC-DC converters

Switched-mode and resonant-mode

power supplies

DC choppers

Pulse generation

Laser drivers

Advantages

2500 V~ Electrical isolation

ISOPLUS 264TM package for clip or

spring mounting

Space savings

High power density

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