IXFP05N100M datasheet(1/4 Pages) IXYS

Part #	IXFP05N100M

Description	High Voltage HiperFET

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

DS100069(11/08)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1000

V

GS(th)

V

DS = VGS, ID = 250μA

2.5

4.5 V

I

GSS

V

GS = ±30V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS

25 μA

V

GS = 0V

T

J = 125°C

500

μA

R

DS(on)

V

GS = 10V, ID = 375mA, Note 1

15

17

Ω

High Voltage HiperFET

(Electrically Isolated Tab)

N-Channel Enhancement Mode

Avalanche Rated

IXFP05N100M

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

1000

V

DGR

T

J

= 25°C to 150°C, R

GS = 1 MΩ

1000

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C

700

mA

I

DM

T

C = 25°C, pulse width limited by TJM

3

A

I

A

T

C = 25°C

1

A

E

AS

T

C = 25°C

100

mJ

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ =150°C

5

V/ns

P

D

T

C = 25°C

25

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

2.5

g

G = Gate

D = Drain

S = Source

Features

Plastic overmolded tab for electrical

isolation

International standard package

Avalanche rated

Low package inductance

Advantages

Easy to mount

Space savings

High power density

OVERMOLDED TO-220

(I

XFP...M) OUTLINE

G

D S

Isolated Tab

V

DSS

= 1000V

I

D25

= 700mA

R

DS(on) ≤

≤≤≤≤ 17

Ω

Preliminary Technical Information

t

rr

≤≤≤≤≤ 300ns

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