IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

Note 2

24

34

S

C

iss

3600

pF

C

oss

V

870

pF

C

rss

280

pF

t

d(on)

20

n s

t

r

V

40

n s

t

d(off)

R

40

n s

t

f

13

n s

Q

g(on)

98

140

nC

Q

gs

V

25

35

nC

Q

gd

45

70

nC

R

thJC

0.5

K/W

R

thCK

(TO-247)

0.15

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

58

A

I

SM

Repetitive, Note 1

232

A

V

SD

I

1.5

V

t

rr

200

n s

Q

RM

0.7

µC

I

RM

7A

I

Note: 1. Pulse width limited by T

JM

2. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

IXFR 58N20Q

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