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IXFR64N50P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFR64N50P Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 4 page  © 2009 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 500 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 500 V V GSS Continuous ±30 V V GSM Transient ±40 V I D25 T C = 25°C37 A I DM T C = 25°C, pulse width limited by TJM 150 A I A T C = 25°C64 A E AS T C = 25°C 2.5 J dV/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns P D T C = 25°C 300 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10s 260 °C V ISOL 50/60 Hz, RMS t = 1min 2500 V~ I ISOL ≤ 1mA t = 1s 3000 V~ M d Mounting Force 20..120 / 4.5..27 N/lb. Weight 5 g Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 500 V V GS(th) V DS = VGS, ID = 8mA 3.0 5.5 V I GSS V GS = ±30V, VDS = 0V ±200 nA I DSS V DS = VDSS, VGS= 0V 25 μA T J = 125°C 1 mA R DS(on) V GS = 10V, ID = 32A, Note 1 95 m Ω PolarTM Power MOSFET HiPerFETTM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXFR64N50P V DSS = 500V I D25 = 37A R DS(on) ≤ ≤≤≤≤ 95mΩ Ω Ω Ω Ω G = Gate D = Drain S = Source Isolated Tab ISOPLUS247 E153432 DS99412F(5/09) t rr ≤≤≤≤≤ 200ns Features International Standard Package Fast Intrinsic Rectifier Avalanche Rated Low R DS(ON) and QG Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Applications Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls |
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