IXFR80N15Q datasheet(1/2 Pages) IXYS

Part #	IXFR80N15Q

Description	HiPerFET Power MOSFETs ISOPLUS247

PDF	2 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Isolated backside*

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

150

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MW

150

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C75

A

I

DM

T

C

= 25

°C, Note 1

320

A

I

AR

T

C

= 25

°C80

A

E

AR

T

C

= 25

°C45

mJ

E

AS

T

C

= 25

°C

1.5

J

dv/dt

I

S

£ I

DM, di/dt £ 100 A/ms, VDD £ VDSS

5

V/ns

T

J

£ 150°C, R

G = 2 W

P

D

T

C

= 25

°C

310

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

Weight

5

g

ISOPLUS 247TM

HiPerFETTMPower MOSFETs

ISOPLUS247TM

(Electrically Isolated Backside)

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g,High dv/dt

Features

l Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

l Low drain to tab capacitance(<30pF)

l Low R

DS (on) HDMOS

TM process

l Rugged polysilicon gate cell structure

l Rated for Unclamped Inductive Load

Switching (UIS)

l Fast intrinsic Rectifier

Applications

l DC-DC converters

l Battery chargers

l Switched-mode and resonant-mode

power supplies

l DC choppers

l AC motor control

Advantages

l Easy assembly

l Space savings

l High power density

G = Gate

D = Drain

S = Source

* Patent pending

E153432

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 250mA

150

V

GS(th)

V

DS = VGS, ID = 4mA

2.0

4.0 V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100 nA

I

DSS

V

DS

= V

DSS

T

J

= 25

°C

25

mA

V

GS = 0 V

T

J

= 125

°C1 mA

R

DS(on)

V

GS = 10 V, ID = IT

22.5 m

W

Notes 2, 3

Advanced Technical Information

98750 (10/00)

IXFR 80N15Q

V

DSS

= 150

V

I

D25

=75

A

R

DS(on)

= 22.5 m

W

t

rr £ 200ns

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