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IXFX 32N50

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

18

28

S

C

iss

4950

5450

pF

C

oss

V

620

730

pF

C

rss

240

310

pF

t

d(on)

35

ns

t

r

V

42

ns

t

d(off)

R

G

= 2

W (External)

110

ns

t

f

26

ns

Q

g(on)

227

300

nC

Q

gs

V

29

40

nC

Q

gd

110

145

nC

R

thJC

0.35

K/W

R

thCK

0.15

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

32

A

I

SM

Repetitive;

128

A

pulse width limited by T

JM

V

SD

I

1.5

V

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

t

rr

250

ns

Q

RM

0.85

mC

I

RM

8A

I

-di/dt = 100 A/

ms,

V

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.83

5.21

.190 .205

A

1

2.29

2.54

.090 .100

A

2

1.91

2.16

.075 .085

b

1.14

1.40

.045 .055

b

1

1.91

2.13

.075 .084

b

2

2.92

3.12

.115 .123

C

0.61

0.80

.024 .031

D

20.80

21.34

.819 .840

E

15.75

16.13

.620 .635

e

5.45 BSC

.215 BSC

L

19.81

20.32

.780 .800

L1

3.81

4.32

.150 .170

Q

5.59

6.20

.220 .244

R

4.32

4.83

.170 .190

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025