IXGP12N60CD1 datasheet(1/2 Pages) IXYS

Part #	IXGP12N60CD1

Description	HiPerFAST IGBT Lightspeed Series

PDF	2 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 2 page

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Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

600

V

CGR

T

J

= 25

°C to 150°C; R

GE = 1 MΩ

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C

= 25

°C24

A

I

C90

T

C

= 90

°C12

A

I

CM

T

C

= 25

°C, 1 ms

48

A

SSOA

V

GE

= 15 V, T

VJ = 125°C, RG = 33 Ω ICM = 24

A

(RBSOA)

Clamped inductive load, L = 300

µH

@ 0.8 V

CES

P

C

T

C

= 25

°C

100

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque with screw M3

0.45/4 Nm/lb.in.

Mounting torque with screw M3.5

0.55/5 Nm/lb.in.

Weight

4g

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

Features

• Very high frequency IGBT

• New generation HDMOSTM process

• Internationalstandardpackage

JEDEC TO-220AB and TO-263AA

• Highpeakcurrenthandlingcapability

Applications

• PFCcircuit

• AC motor speed control

• DC servo and robot drives

• Switch-modeandresonant-mode

power supplies

• Highpoweraudioamplifiers

Advantages

• Fastswitchingspeed

• High power density

98513C (2/02)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

BV

CES

I

C

= 250

µA, V

GE = 0 V

600

V

GE(th)

I

C

= 250

µA, V

GE = VGE

2.5

5.0

V

I

CES

V

CE = 0.8

V

CES

T

J = 25°C

200

µA

V

GE = 0 V

T

J = 125°C

1.5

mA

I

GES

V

CE = 0 V, VGE = ±20 V

±100 nA

V

CE(sat)

I

C

= I

CE90, VGE = 15 V

2.1

2.7

V

HiPerFASTTM IGBT

LightspeedTM Series

V

CES

= 600 V

I

C25

=

24 A

V

CE(sat)

=

2.7 V

t

fi(typ)

= 55 ns

IXGA 12N60CD1

IXGP 12N60CD1

TO-220 AB

(IXGP)

G = Gate

C

= Collector

E = Emitter

TAB = Collector

E

C

G

E

TO-263 (IXGA)

C (TAB)

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