IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA16N60C2D1

IXGP16N60C2D1

IXGH16N60C2D1

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

Reverse Diode (FRED)

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

F

I

3.0

V

T

1.7

V

I

RM

2.5

A

t

rr

110

ns

t

rr

30

ns

R

thJC

2.5 °C/W

I

-di

I

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

8

S

C

ies

657

pF

C

oes

V

72

pF

C

res

22

pF

Q

g(on)

25

nC

Q

ge

I

5

nC

Q

gc

13

nC

t

d(on)

16

ns

t

ri

17

ns

E

on

0.16

mJ

t

d(off)

75

ns

t

fi

33

ns

E

off

0.09

0.16 mJ

t

d(on)

16

ns

t

ri

18

ns

E

on

0.27

mJ

t

d(off)

115

ns

t

fi

100

ns

E

off

0.27

mJ

R

thJC

0.83

°C/W

R

thCK

TO-220

0.50

°C/W

TO-247

0.21

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2