IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 40N60C

IXGT 40N60C

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715 6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

30

40

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

3300

pF

C

oes

V

310

pF

C

res

65

pF

Q

g

116

nC

Q

ge

I

23

nC

Q

gc

55

nC

t

d(on)

25

ns

t

ri

30

ns

t

d(off)

100

150

ns

t

fi

75

150

ns

E

off

0.85

1.7 mJ

t

d(on)

25

ns

t

ri

35

ns

E

on

0.40

mJ

t

d(off)

50

ns

t

fi

105

ns

E

off

1.2

mJ

R

thJC

0.50 K/W

R

thCK

(IXGH40N60C)

0.25

K/W

Inductive load, T

°°°°C

I

V

Remarks: Switching times may

increase for V

higher T

Inductive load, T

°°°°C

I

V

Remarks: Switching times may

increase for V

higher T

TO-247 AD Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

e

∅ P

TO-268 Outline

Min. Recommended Footprint

(Dimensions in inches and mm)