IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH60N30C3

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

C

= 0.5 • I

28

46

S

Pulse test, t

≤ 300µs; duty cycle, d ≤ 2%.

C

ies

3800

pF

C

oes

V

240

pF

C

res

63

pF

Q

g

101

nC

Q

ge

I

C

= I

21

nC

Q

gc

37

nC

t

d(on)

23

ns

t

ri

28

ns

E

on

0.15

mJ

t

d(off)

108

160

ns

t

fi

68

ns

E

off

0.30

0.55

mJ

t

d(on)

22

ns

t

ri

28

ns

E

on

0.26

mJ

t

d(off)

120

ns

t

fi

101

ns

E

off

0.40

mJ

R

thJC

0.42

°C/W

R

thCK

0.21

°C/W

Inductive Load, T

°°°°C

I

V

= 5

Ω

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2

6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Inductive Load, T

°°°°C

I

V

= 5

Ω

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

TO-247 AD Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

e

∅ P