IXGL200N60B3 datasheet(1/6 Pages) IXYS

Part #	IXGL200N60B3

Description	GenX3 600V IGBT

PDF	6 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 6 page

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

CES

I

C

= 250

μA, V

GE = 0V

600

V

GE(th)

I

C

= 250

μA, V

CE = VGE

3.0

5.0

V

I

CES

V

CE = VCES

200

μA

V

GE = 0V

T

J = 125°C

2

mA

I

GES

V

CE = 0V, VGE = ±20V

±100

nA

V

CE(sat)

I

C

= 100A, V

GE = 15V, Note 1

1.35

1.50

V

I

C

= 200A

1.65

V

T

J = 125°C

1.75

V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

600

V

CGR

T

J

= 25

°C to 150°C, R

GE = 1MΩ

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C

= 25

°C (limited by leads)

150

A

I

C110

T

C

= 110

°C (chip capability)

90

A

I

CM

T

C

= 25

°C, 1ms

600

A

SSOA

V

GE = 15V, TVJ = 125°C, RG = 1Ω

I

CM = 300

A

(RBSOA)

Clamped inductive load @ V

CE ≤ 600V

P

C

T

C

= 25

°C

400

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum lead temperature for soldering

300

°C

T

SOLD

Plastic body for 10s

260

°C

V

ISOL

50/60Hz, RMS, 1 minute

2500

V~

I

ISOL ≤ 1mA

t = 1s

3000

V~

F

C

Mounting force

20..120/4.5..27

N/lb.

Weight

8

g

DS99917B(05/08)

IXGL200N60B3

G = Gate

C = Collector

E = Emitter

G CCE E

V

CES

= 600V

I

C110

= 90A

V

CE(sat) ≤

≤≤≤≤ 1.50V

t

fi(typ)

= 183ns

GenX3TM 600V IGBT

Medium speed low Vsat PT

IGBTs 5-40 kHz switching

Features

Silocon chip on Direct-Copper Bond

(DCB) substrate

Isolated mounting surface

Square RBSOA

High current handling capability

2500V electrical isolation

Advantages

High power density

Low gate drive requirement

Applications

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

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