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BSP321P Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSP321P Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page  BSP321P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=70 °C Pulsed drain current I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=-0.98 A, R GS=25 Ω mJ Gate source voltage V GS V Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ESD Class JESD22-A114-HBM Soldering temperature IEC climatic category; DIN IEC 68-1 -0.98 -0.79 1.8 Value 57 -3.9 55/150/56 -55 ... 150 ±20 260 °C 1A (250V to 500V) V DS -100 V R DS(on),max 900 m Ω I D -0.98 A Product Summary Type Package Tape and Reel Information Marking Lead free Packing BSP321P PG-SOT-223 L6327: 1000 pcs/reel BSP321P Yes Non dry PG-SOT-223 Rev 1.04 page 1 2011-04-05 |
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