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SST12LP18E Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST12LP18E Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
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1 / 2 page ![]() A Microchip Technology Company ©2011 Silicon Storage Technology, Inc. DS75008A 05/11 Product Brief www.microchip.com Features • High gain: – Typically 25 dB gain across 2.4~2.5 GHz – Low battery voltage operation: VREF as low as 2.7V. • High linear output power (at 3.3V): – >26 dBm P1dB – ~2.5% added EVM up to 18 dBm for 54 Mbps 802.11g signal – Meets 802.11g OFDM ACPR requirement up to 21.5 dBm – Meets 802.11b ACPR requirement up to 22.5 dBm • High power-added efficiency/Low operating cur- rent for both 802.11b/g/n applications – ~32% @ POUT = 21.5 dBm for 802.11g – ~36% @ POUT = 22.5 dBm for 802.11b • Low shut-down current (~2 µA) • Low Voltage operation down to 2.7V bias. • Limited variation over temperature – ~1 dB power variation between -40°C to +85°C – ~2 dB gain variation between -40°C to +85°C • Temperature and load insensitive on-chip power detector >15 dB dynamic range • Packages available – 8-contact XSON – 2mm x 2mm x 0.45mm • All non-Pb (lead-free) devices are RoHS compliant Applications • WLAN (IEEE 802.11b/g/n)DS75008 • Home RF • Cordless phones • 2.4 GHz ISM wireless equipment Block Diagram Product Ordering Valid combinations for SST12LP18E SST12LP18E-QX8E SST12LP18E Evaluation Kits SST12LP18E-QX8E-K Note: Valid combinations are those products in mass produc- tion or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. RFIN VCCB VREF DET VCC1 VCC2 RFOUT 75008 B1.0 Bias Circuit 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP18E The SST12LP18E is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. The SST12LP18E is a 2.4 GHz high-efficiency Power Ampli- fier designed in compliance with IEEE 802.11b/g/n applications. It typically provides 25 dB gain with 32% power-added efficiency. The SST12LP18E has excellent linear- ity while meeting 802.11g spectrum mask at 21.5 dBm. The SST12LP18E is ideal for embedded applications because it provides linear power evan at low-battery volt- ages. With a reference voltage as low as 2.7V, the SST12LP18E will operate from -20°C to +85°C and is offered in a 8-contact XSON package. |
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