Analog Integrated Circuit Device Data

8

Freescale Semiconductor

33810

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

INJECTOR DRIVER OUTPUTS (OUT 0:3) (Continued)

Output Clamp Voltage 1

48

53

58

V

Output Leakage Current

–

–

–

–

–

–

20

3000

10

μA

Over-temperature Shutdown(10)

155

–

185

Over-temperature Shutdown Hysteresis(10)

5.0

10

15

IGNITION (IGBT) GATE DRIVER PARAMETERS (GD 0:3 FB0:3)

Gate Driver Output Voltage

4.8

0

7.0

0.375

9.0

0.5

V

Sleep Mode Gate to Source Resistor

)

100

200

300

K

Ω

Sleep Mode FBx pin Leakage Current

–

–

1.0

μA

Feedback Sense Current (FBx Input Current)

FBx = 32 V, Outputs Programmed OFF

1.0

μA

Gate Drive Source Current (1

650

780

950

μA

Gate Drive Turn Off Resistance

500

–

1000

Ω

SOFT SHUTDOWN FUNCTION (VOLTAGES REFERENCED TO IGBT COLLECTOR)

Low Voltage Flyback Clamp

Driver Command Off, Soft Shutdown Enabled, GDx = 2.0 V

VPWR

+9.0

VPWR

+11

VPWR + 13

V

Rising Edge Relative to VPWR

18

21

24

V

Falling Edge Relative to VPWR, Default = 5.5 V Assuming ideal external

10:1 voltage divider. Voltage measured at high end of divider, not at pin.

Tolerance of divider not included

1.2

4.9

7.4

9.9

2.75

5.5

8.2

11.00

3.6

6.1

9.1

12.1

V

Open Secondary Comparator Threshold (referenced from primary to

Rising Edge Relative to GND. No hysteresis with 10:1 voltage divider.

11.5

–

15.5

V

CURRENT SENSE COMPARATOR (RSP, RSN)

NOMI Trip Threshold Accuracy - Steady State Condition

3.0 A across 0.02

Ω (RSP - RSN = 60 mV)

10.75 A across 0.04

Ω (RSP - RSN = 430 mV)

-10

–

10

%

Table 3. Static Electrical Characteristics

Characteristics noted under conditions of 3.0 V

≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 32 V, -40°C ≤ TC ≤ 125°C, and calibrated

timers, unless otherwise noted. Where typical values reflect the parameter’s approx. average value with VPWR = 13 V, TA =

25

°C.

Characteristic

Symbol

Min

Typ

Max

Unit