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2N6849 Datasheet(PDF) 2 Page - Seme LAB |
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2N6849 Datasheet(HTML) 2 Page - Seme LAB |
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2 / 2 page ![]() Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/00 LAB SEME 2N6849 Parameter Test Conditions Min. Typ. Max. Unit V W V nA mA V (S É ) pF nC ns A V ns mC — -100 0.30* -2 -4 -100 100 -250 -1000 - 2.1 2.5 3.5 7.5 500 300 100 25 45 13 23 12 22 30 60 70 140 70 140 70 140 -6.5 -25 4 250 1.8 negligible VGS = 0 ID = 250mA VGS = -10V ID = - 4.1A VDS = VGS ID = - 0.25mA VGS = - 20V VGS = 20V VDS = Max rating x 0.8 VGS = 0V TC = -125°C VDS ³ ID(on)RDS(on)max. VGS = -10V ID = - 6.5A VDS = -5V ID = - 4.1A VGS = 0V VDS = - 25V f = 1.0 MHz VGS = -15V ID = - 15A VDS = 08v Max Rating VDD = - 42V ID = - 4.1A Zo = 50 W Modified MOSFETSymbol showing the integralreverse P-N Junction rectifier. VGS = 0 IS = 6.5A TJ = 25°C IF = - 6.5A TJ = 25°C diF/dt = 100 A/ms ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain – Source Breakdown Voltage* Static Drain – Source On–State Resistance 1 Gate Threshold Voltage* Forward Gate – Source Leakage Reverse Gate – Source Leakage Zero Gate Voltage Drain Current* On-State Drain Voltage1 Forward Transconductance 1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Continous Source Current* Pulse Source Current |(Body Diode)2 Diode Forward Voltage 1 Reverse Recovery Time Reverse Recovery Charge Forward Turn–On Time BVDSS RDS(on) VGS(th) IGSS IGSS IDSS VDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton STATIC ELECTRICAL RATINGS SOURCE – DRAIN DIODE CHARACTERISTICS *JEDEC Registered Value 1 Pulse Test: Pulse Width £ 300ms, duty cycle £ 2% 2 Repetitive Rating: Pulse width limited by max. junction temperature 3 VDD = 25V starting Tj = 25.°C, L=17.25mH, RG = 25W, Peak IL = 6.5A D G S |
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