drain

pin 2

gate

pin 1

source

pin 3

650V CoolMOS™ CFD Power Transistor

IPD65R660CFD IPB65R660CFD,

IPP65R660CFD IPA65R660CFD

Final Data Sheet

2

Rev. 2.0, 2011-02-01

1

Description

CoolMOS™ is a revolutionary technology for high voltage power

MOSFETs, designed according to the superjunction (SJ) principle and

pioneered by Infineon Technologies. 650V CoolMOS™ CFD series

combines the experience of the leading SJ MOSFET supplier with high

class innovation. The resulting devices provide all benefits of a fast

switching SJ MOSFET while offering an extremely fast and robust body

diode. This combination of extremely low switching, commutation and

conduction losses together with highest robustness make especially

resonant switching applications more reliable, more efficient, lighter,

and cooler

Features

•

Ultra-fast body diode

•

Very high commutation ruggedness

•

Extremely low losses due to very low FOM Rdson*Qg and Eoss

•

Easy to use/drive

•

•

Pb-free plating, Halogen free mold compound

Applications

650V CoolMOS™ CFD is especially suitable for resonant switching PWM

stages for e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom.

Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem

poles is generally recommended.

1) J-STD20 and JESD22

Table 1

Key Performance Parameters

Parameter

Value

Unit

V

700

V

0.66



Q

g,typ

20

nC

I

D,pulse

17

A

E

1.8

µJ

Body diode d

500

A/µs

Type / Ordering Code

Package

Marking

Related Links

IPD65R660CFD

PG-TO252

IFX CoolMOS Webpage

IPB65R660CFD

PG-TO263

IFX Design tools

IPP65R660CFD

PG-TO220

65F660

IPA65R660CFD

PG-TO220 FullPAK

IPI65R660CFD

PG-TO262

IPW65R660CFD

PG-TO247