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2SA950 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA950 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 14-Feb-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES 1W output applications Complementary to 2SC2120 CLASSIFICATION OF hFE (1) Product-Rank 2SA950-O 2SA950-Y Range 100-200 160-320 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -35 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.8 A Collector Power Dissipation PC 600 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -35 - - V IC= -0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -30 - - V IC= -10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -0.1mA, IC=0 Collector Cut-Off Current ICBO - - -0.1 μA VCB= -35V, IE=0 Emitter Cut-Off Current IEBO - - -0.1 μA VEB= -5V, IC=0 DC Current Gain hFE (1) 100 - 320 VCE= -1V, IC= -100mA hFE (2) 35 - - VCE= -1V, IC= -700mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.7 V IC= -500mA, IB= -20mA Emitter to Base Voltage VBE -0.5 - -0.8 V VCE= -1V, IC= -10mA Transition Frequency fT - 120 - MHz VCE= -5V, IC= -10mA Collector Output Capacitance Cob - 19 - pF VCB= -10V, IE=0, f=1MHz TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Emitter Collector Base |
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