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2SA1980 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA1980 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente 2SA1980 -150 mA, -50 V PNP Plastic Encapsulated Transistor 14-Jan-2011 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J 3Base 1 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low collector saturation voltage: VCE(sat) =-0.3V(Max.) Low output capacitance : Cob=4pF (Typ.) Complements of the 2SC5343 CLASSIFICATION OF hFE Product-Rank 2SA1980-O 2SA1980-Y 2SA1980-G 2SA1980-L Range 70~140 120~240 200~400 300~700 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -150 mA Collector Power Dissipation PC 625 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO -50 - - V IC=-100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -50 - - V IC=-10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE=-10µA, IC=0 Collector Cut-Off Current ICBO - - -0.1 µA VCB=-50 V, IE=0 Collector Cut-Off Current ICEO - - -0.1 µA VEB=-5 V, IC=0 DC Current Gain hFE 70 - 700 VCE=-6V, IC=-2mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.30 V IC=-100mA, IB=-10mA Transition Frequency fT 80 - - MHz VCE=-10V, IC =-1mA Collector Output Capacitance Cob - 4 7 pF VCB=-10V, IE=0, f=1MHz Noise Figure NF - - 10 dB VCE=-6V, IC=-0.1mA, f=1KHz, RS=10K TO-92 Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 1 1 1 1 Emitter 2 2 2 2 Collector 3 3 3 3 Base |
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