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B772S Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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B772S Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente B772S -3A , -40V PNP Plastic-Encapsulated Transistor 04-Mar-2011 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J 3 Base 1 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low speed switching. CLASSIFICATION OF hFE Product-Rank B772S-R B772S-O B772S-Y B772S-GR Range 60~120 100~200 160~320 200~400 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -6 V Collector Current - Continuous IC -3 A Collector Power Dissipation PC 625 mW Thermal Resistance From Junction to Ambient RθJA 200 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO -40 - - V IC= -100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -30 - - V IC= -10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -6 - - V IE= -100µA, IC=0 Collector Cut-Off Current ICBO - - -1 µA VCB= -40V, IE=0 Collector Cut-Off Current ICEO - - -10 µA VCE= -30V, IB=0 Emitter Cut-Off Current IEBO - - -1 µA VEB= -6V, IC=0 DC Current Gain hFE 60 - 400 VCE= -2V, IC= -1A Collector to Emitter Saturation Voltage VCE(sat) - - -0.5 V IC= -2A, IB= -200mA Base to Emitter Voltage VBE(sat) - - -1.5 V VCE= -2V, IC= -200mA Transition Frequency fT 50 80 - MHz VCE= -5V, IC= -100mA, f=10MHz 1 1 1 1Emitter 2 2 2 2Collector 3 3 3 3Base TO-92 Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 |
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