BC337_11 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

BC337 / BC338

NPN Plastic-Encapsulate Transistor

04-Mar-2011 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BC337

Collector to Base Breakdown

Voltage

BC338

V(BR)CBO

IC=100µA, IE=0

BC337

Collector to Emitter Breakdown

Voltage

BC338

V(BR)CEO

IC=10mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

IE=10µA, IC=0

BC337

0.1

VCB=45V, IE=0

Collector Cut-Off Current

BC338

ICBO

0.1

VCB=25V, IE=0

BC337

0.2

VCE=40V, IB=0

Collector Cut-Off Current

BC338

ICEO

0.2

VCE=20V, IB=0

Emitter Cut-Off Current

IEBO

0.1

VEB=4V, IC=0

hFE (1)

100

630

VCE=1V, IC=100mA

DC Current Gain

hFE (2)

VCE=1V, IC=300mA

Collector-Emitter Saturation Voltage

VCE(sat)

0.7

IC=500mA, IB=50mA

Base-Emitter Saturation Voltage

VBE(sat)

1.2

IC=500mA, IB=50mA

Base-Emitter Voltage

VBE

1.2

VCE=1V, IC=300mA

Transition Frequency

210

MHz VCE=5V, IC=10mA, f=100MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

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