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BC847BV Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BC847BV Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual BC847BV Dual NPN Transistors Plastic-Encapsulate Transistors RoHS Compliant Product * Epitaxial Die Construction (BC857BV) * Complementary PNP Type Available FEATURES * Ultra-Small Surface Mount Package http://www.SeCoSGmbH.com Elektronische Bauelemente 23-Mar-2007 Rev. A Page 1 of 2 MAXIMUM RATINGS* TA=25 unless otherwise noted . Symbol Parameter Value Units VCBO Collector-Base Voltage 50 45 6 0.1 0.15 150 -55-150 VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage V IC Collector Current -Continuous A PC Collector Dissipation W V C o C o TJ Junction Temperature Tstg Storage Temperature RθJA Thermal Resistance. Junction to Ambient Air 833 C/W o SOT-563 Dimensions in inches and (millimeters) .051(1.30) .043(1.10) .012(0.30) .004(0.10) .067(1.70) .059(1.50) .067(1.70) .059(1.50) .022(0.55) .018(0.45) .011(0.27) .007(0.17) .002(0.05) .000(0.00) .024(0.60) .021(0.525) .006(0.16) .004(0.09) 7o REF. 7o RE F . Marking:K4V ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=1µA,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 15 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE(1) VCE=5V,IC=2mA 200 450 Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=0.5mA IC=100mA,IB=5mA 100 300 mV Base-emitter saturation voltage VBE(sat) IC=10mA,IB=0.5mA IC=100mA,IB=5mA 700 900 mV Base-emitter voltage VBE VCE=5V,IC=2mA VCE=5V,IC=10mA 580 660 700 770 mV Transition frequency fT VCE=5V,IC=10mA,f=100MHz MHz Output capacitance Cob VCB=10V,IE=0,f=1MHz 4.5 pF 100 Noise Figure NF VCE=5V,Rs=2kΩ, f=1kHz,BW=200Hz 10 dB |
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