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D2013 Datasheet(PDF) 2 Page - Seme LAB

Part # D2013
Description  METAL GATE RF SILICON FET
PDF  4 Pages
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

D2013 Datasheet(HTML) 2 Page - Seme LAB

  D2013 Datasheet HTML 1Page - Seme LAB D2013 Datasheet HTML 2Page - Seme LAB D2013 Datasheet HTML 3Page - Seme LAB D2013 Datasheet HTML 4Page - Seme LAB  
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Parameter
Test Conditions
Min.
Typ.
Max.
Unit
D2013UK
Prelim.12/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
65
1
1
17
0.72
10
40
20:1
48
24
2
VGS = 0
ID = 10mA
VDS = 28V
VGS = 0
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 0.8A
PO = 20W
VDS = 28V
IDQ = 0.8A
f = 1GHz
VDS = 0
VGS = –5V f = 1MHz
VDS = 28V
VGS = 0
f = 1MHz
VDS = 28V
VGS = 0
f = 1MHz
V
mA
mA
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain–Source
BVDSS
Breakdown Voltage
Zero Gate Voltage
IDSS
Drain Current
IGSS
Gate Leakage Current
VGS(th) Gate Threshold Voltage *
gfs
Forward Transconductance *
GPS
Common Source Power Gain
h
Drain Efficiency
VSWR
Load Mismatch Tolerance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
RTHj–case
Thermal Resistance Junction – Case
Max. 2.1°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
ms , Duty Cycle £ 2%
TOTAL DEVICE
PER SIDE
PER SIDE



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