D2021 datasheet(1/2 Pages) SEME-LAB

Part #	D2021

Description	METAL GATE RF SILICON FET

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	SEME-LAB [Seme LAB]

Direct Link	http://www.semelab.co.uk

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1 / 2 page

D2021UK

Prelim. 2/99

Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.

E-mail: sales@semelab.co.uk

Website http://www.semelab.co.uk

PD

Power Dissipation

BVDSS

Drain – Source Breakdown Voltage

BVGSS

Gate – Source Breakdown Voltage

ID(sat)

Drain Current

Tstg

Storage Temperature

Tj

Maximum Operating Junction Temperature

17.5W

65V

±20V

3A

–65 to 150°C

200°C

MECHANICAL DATA

1

2

3

4

8

7

6

5

M

N

B

C

A

E

FG

D

H

K

L

J

P

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

7.5W – 28V – 1GHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW Crss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

SO8 PACKAGE

PIN 1 – SOURCE

PIN 2 – DRAIN

PIN 3 – DRAIN

PIN 4 – SOURCE

PIN 5 – SOURCE

PIN 6 – GATE

PIN 7 – GATE

PIN 8 – SOURCE

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 1 GHz

Dim.

A

B

C

D

E

F

G

H

J

K

L

M

N

P

mm

Tol.

Inches

Tol.

4.06

±0.08

0.160

±0.003

5.08

±0.08

0.200

±0.003

1.27

±0.08

0.050

±0.003

0.51

±0.08

0.020

±0.003

3.56

±0.08

0.140

±0.003

4.06

±0.08

0.160

±0.003

1.65

±0.08

0.065

±0.003

+0.25

+0.010

0.76

0.030

-0.00

-0.000

0.51

Min.

0.020

Min.

1.02

Max.

0.040

Max.

45°

Max.

45°

Max.

0°

Min.

0°

Min.

7°

Max.

7°

Max.

0.20

±0.08

0.008

±0.003

2.18

Max.

0.086

Max.

4.57

±0.08

0.180

±0.003

METAL GATE RF SILICON FET

TetraFET

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