Static Characteristics

Source-Drain Diode Characteristics

Dynamic Characteristics

APT7F120B_S

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Starting at T

J

= 25°C, L = 127.78mH, R

G

= 4.7

Ω, I

AS

= 3A.

3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.

4 C

o(cr)

is defined as a fixed capacitance with the same stored charge as C

OSS

with V

DS

= 67% of V

(BR)DSS

.

5 C

o(er)

is defined as a fixed capacitance with the same stored energy as C

OSS

with V

DS

= 67% of V

(BR)DSS

. To calculate C

o(er)

for any value of

V

DS

less than V

(BR)DSS,

use this equation: C

o(er)

= -1.17E-7/V

DS

^2 + 1.42E-8/V

DS

+ 2.01E-11.

6 R

G

is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

G

D

S

Unit

V

V/°C

Ω

V

mV/°C

µA

nA

Unit

S

pF

nC

ns

Unit

A

V

ns

µC

A

V/ns

Min

Typ

Max

1200

1.41

1.57

2.4

2.5

4

5

-10

250

1000

±100

Min

Typ

Max

8

2565

31

190

75

38

80

13

37

14

8

45

13

Min

Typ

Max

7

28

1.0

190

325

0.64

1.45

7.5

10.7

25

Test Conditions

V

GS

= 0V

D

= 250µA

Reference to 25°C, I

D

= 250µA

V

GS

= 10V

D

= 3A

V

GS

= V

I

D

= 1mA

V

DS

= 1200V

T

J

= 25°C

V

GS

= 0V

T

J

= 125°C

V

GS

= ±30V

Test Conditions

V

DS

= 50V

D

= 3A

V

GS

= 0V

DS

= 25V

f = 1MHz

V

GS

= 0V

DS

= 0V to 800V

V

GS

= 0 to 10V

D

= 3A,

V

DS

= 600V

Resistive Switching

V

DD

= 800V

D

= 3A

R

G

= 4.7

GG

= 15V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I

SD

= 3A

J

= 25°C, V

GS

= 0V

T

J

= 25°C

T

J

= 125°C

I

SD

T

J

= 25°C

di

dt = 100A/µs

T

J

= 125°C

V

DD

= 100V

T

J

= 25°C

T

J

= 125°C

I

3A, di/dt

≤1000A/µs, V

DD

= 800V,

T

J

= 125°C

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

Symbol

V

BR(DSS)

ΔV

BR(DSS)

/

ΔT

J

R

DS(on)

V

GS(th)

ΔV

GS(th)

/

ΔT

J

I

DSS

I

GSS

Symbol

g

fs

C

iss

C

rss

C

oss

C

o(cr)

4

C

o(er)

5

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

I

rrm

dv/dt