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EMX1 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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EMX1 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page ![]() Elektronische Bauelemente EMX1 0.15 W, 150 mA, 60 V Plastic-Encapsulated General Purpose Transistors (Dual) 01-June-2005 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOT-563 Dimensions in inches and (millimeters) .051(1.30) .043(1.10) .012(0.30) .004(0.10) .067(1.70) .059(1.50) .067(1.70) .059(1.50) .022(0.55) .018(0.45) .011(0.27) .007(0.17) o .006(0.16) .004(0.09) 7 REF. 7o RE . .002(0.05) .000(0.00) .024(0.60) .021(0.525) (3) (2) (1) (4) (6) (5) Tr Tr1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Two 2SC2412K chips in a SOT-563 package. Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. MARKING EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 7 V Collector Current – Continuous IC 0.15 A Collector Power Dissipation PC 0.15 W Junction & Storage temperature TJ, TSTG 150, -55~150 ℃ ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V(BR)CBO 60 - - V IC=50μA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 7 - - V IE=50μA, IC=0 Collector Cut-Off Current ICBO - - 0.1 μA VCB=60V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 μA VEB=7V, IC=0 DC Current Gain hFE 120 - 560 VCE=6V, IC=1mA Collector-Emitter Saturation Voltage VCE(sat) - - 0.4 V IC=50mA, IB=5mA Transition Frequency fT - 180 - MHz VCE=12V, IC=2mA, f=100MHz Collector Output Capacitance Cob - 2.0 3.5 pF VCB=12V, IE=0, f=1MHz X1 1 |
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