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D2219 Datasheet(PDF) 1 Page - Seme LAB

Part # D2219
Description  METAL GATE RF SILICON FET
PDF  2 Pages
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

D2219 Datasheet(HTML) 1 Page - Seme LAB

  D2219 Datasheet HTML 1Page - Seme LAB D2219 Datasheet HTML 2Page - Seme LAB  
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D2219UK
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/95
PD
Power Dissipation
BVDSS
Drain – Source Breakdown Voltage
BVGSS
Gate – Source Breakdown Voltage
ID(sat)
Drain Current
Tstg
Storage Temperature
Tj
Maximum Operating Junction Temperature
17.5W
40V
±20V
2A
–65 to 150°C
200°C
MECHANICAL DATA
1
2
3
4
8
7
6
5
M
N
B
C
A
E
FG
D
H
K
L
J
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
2.5W – 12.5V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
Tol.
Inches
Tol.
4.06
±0.08
0.160
±0.003
5.08
±0.08
0.200
±0.003
1.27
±0.08
0.050
±0.003
0.51
±0.08
0.020
±0.003
3.56
±0.08
0.140
±0.003
4.06
±0.08
0.160
±0.003
1.65
±0.08
0.065
±0.003
+0.25
+0.010
0.76
0.030
-0.00
-0.000
0.51
Min.
0.020
Min.
1.02
Max.
0.040
Max.
45°
Max.
45°
Max.
0°
Min.
0°
Min.
7°
Max.
7°
Max.
0.20
±0.08
0.008
±0.003
2.18
Max.
0.086
Max.
4.57
±0.08
0.180
±0.003
METAL GATE RF SILICON FET
TetraFET


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