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MMBT5401 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT5401 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 3 page  Elektronische Bauelemente MMBT5401 PNP Silicon General PurposeTransistor 01-June-2002 Rev. A Page 2 of 3 CHARACTERISTICS CURVE Figure 1. DC Current Gain IC, COLLECTOR CURRENT (mA) 30 100 150 200 0.1 0.5 2.0 3.0 10 0.2 0.3 20 1.0 5.0 TJ = 125 C 25 C -55 C 70 50 20 30 50 100 VCE= -1.0 V VCE= -5.0 V Figure 2. Collector Saturation Region IB, BASE CURRENT (mA) 1.0 0.1 0.5 2.0 10 0.2 1.0 5.0 20 50 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 Figure 3. Collector Cut-Off Region VBE, BASE-EMITTER VOLTAGE (VOLTS) 103 0.1 0.3 0.2 102 101 100 10-1 10-2 10-3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IC = 1.0 mA 10 mA 30 mA 100 mA VCE= 30 V IC = ICES TJ= 125 C 75 C 25 C REVERSE FORWARD |
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