MS2209

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

DESCRIPTION:

The MS2209 is a broadband, high peak pulse power silicon NPN

bipolar device specifically designed for avionics applications requiring

broad bandwidth with moderate duty cycles and pulse width

constraints such as ground/ship based DME/TACAN.

This device is also designed for specialized applications including

JTIDS applications when duty cycle is moderately higher. Gold

metallization and emitter ballasting assure high reliability under Class

C amplifier operation.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

Collector Supply Voltage

50

V

Device Current

7.0

A

Power Dissipation

220

W

Junction Temperature (RF Pulsed Operation)

+200

°C

Storage Temperature

-65 to +200

°C

Thermal Data

Junction-case Thermal Resistance

0.80

°C/W

Rev B- September 2008

Features

• 225 MHz BANDWIDTH

• COMMON BASE

• GOLD METALLIZATION

• CLASS C OPERATION

• POUT = 90 W MIN. WITH 8.4 dB GAIN

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS