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MSiCSE50120D Datasheet(PDF) 1 Page - Microsemi Corporation |
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MSiCSE50120D Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  PRELIMINARY TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com SILICON CARBIDE DUAL SCHOTTKY POWER RECTIFIER T4-LDS-0105 Rev. 1 (091991) Page 1 of 2 DEVICES MSiCSE50120CC MSiCSE50120CA MSiCSE50120D 50A / 1200V Silicon Carbide Dual Schottky Rectifier ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Peak Repetitive Reverse Voltage VRWM 1200 V Surge Peak Reverse Voltage VRSM 1200 V DC Blocking Voltage VDC 1200 V Average Forward Current, 25°C Io 50 Apk Peak Surge Forward Current @ tp = 8.3ms, half sinewave, Io = 0; VRM = 0 IFSM 150 Apk Thermal Resistance, Junction to Case Rθjc °C/W Thermal Resistance, Junction to Ambient Rθja °C/W Operating Junction Temperature Tj -65°C to +225 °C Storage Temperature Tstg -65°C to +225 °C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Per Diode) Parameters / Test Conditions Symbol Min. Max. Unit Forward Voltage* IF = 10A, Tj = 25°C IF = 25A, Tj = 25°C IF = 50A, Tj = 25°C VF 1.2 1.5 1.8 V Reverse Current VR = 1200V, Tj = 25°C VR = 1200V, Tj = 175°C IR 200 500 µA Junction Capacitance VR = 0V f = 1MHz Cj TBD pF * Pulse test: Pulse width 300 µsec, Duty cycle 2% Note: 1. Derate linearly @ tbd TO-258 MSiCSE50120 • 1 • 2 • 3 CC – COMMON CATHODE • 1 • 2 • 3 CA – COMMON ANODE • 1 • 2 • 3 D - DOUBLER |
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