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IRF460 Datasheet(PDF) 2 Page - Seme LAB

Part # IRF460
Description  N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
PDF  2 Pages
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

IRF460 Datasheet(HTML) 2 Page - Seme LAB

  IRF460 Datasheet HTML 1Page - Seme LAB IRF460 Datasheet HTML 2Page - Seme LAB  
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IRF460
Prelim. 11/98
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
21
84
1.8
580
8.1
IS
ISM
VSD
trr
Qrr
(Body Diode)
(Body Diode)
VGS = 0V , IS = – ID [Cont.]
IS = – ID [Cont.] , dls / dt = 100A/µs
IS = – ID [Cont.] , dls / dt = 100A/µs
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
µC
Characteristic
Min.
Typ.
Max. Unit
0.42
30
RθJC
RθJA
Junction to Case
Junction to Ambient
°C/W
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8Ω
pF
nC
ns
2890
590
230
140
190
18
27
75
135
19
35
43
120
85
130
56
98
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.



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