IRF9230

Prelim. 9/96

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

–200

–0.2

0.80

0.92

–2

–4

2

–25

–250

–100

100

700

200

40

831

0.8

7.0

5.0

17

50

100

100

80

–6.5

–28

–6.0

400

4

Negligible

5.0

13

1.67

0.12

30

Reference to 25°C

f = 1MHz

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Reverse Recovery Charge

Forward Turn–On Time

V

V/°C

Ω

V

S (É)

µA

nA

pF

nC

ns

A

V

ns

µC

nH

°C/W

∆BV

DSS

∆T

J

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width

≤ 300ms, δ≤ 2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Thermal Resistance Junction – Case

Thermal Resistance Case – Sink

Thermal Resistance Junction – Ambient

PACKAGE CHARACTERISTICS

THERMAL CHARACTERISTICS