IRFY044 datasheet(2/2 Pages) SEME-LAB

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IRFY044

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 11/95

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS = 0

ID = 1mA

Reference to 25°C

ID = 1mA

VGS = 10V

ID = 20A

VDS = VGS

ID = 250µA

VDS ≥ 15V

ID = 20A

VGS = 0

VDS = 0.8BVDSS

TJ = 125°C

VGS = 20V

VGS = –20V

VGS = 0

VDS = 25V

f = 1MHz

VGS = 10V

ID = 20A

VDS = 0.5BVDSS

VGS = 10V

VDD = 30V

ID = 20A

RG = 9.1Ω

IS = 20A

TJ = 25°C

VGS = 0

IF = 20A

TJ = 25°C

di / dt ≤ 100A/µsVDD ≤ 50V

ELECTRICAL CHARACTERISTICS (T

C = 25°C unless otherwise stated)

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Pulse Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

0.68

0.035

250

100

–100

2400

1100

230

6.7

130

128

2.5

220

1.6

8.7

V/°C

Ω

µA

µC

BVDSS

∆BV

DSS

∆T

RDS(on)

VGS(th)

gfs

IDSS

IGSS

Ciss

Coss

Crss

Qgs

Qgd

td(on)

td(off)

ISM

VSD

trr

Qrr

STATIC ELECTRICAL RATINGS

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(from 6mm down drain lead pad to centre of die)

Internal Source Inductance (from 6mm down source lead to centre of source bond pad)

PACKAGE CHARACTERISTICS

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