Elektronische Bauelemente

SSK3018K

100mA, 30V

N-Channel MOSFET

10-Jan-2010 Rev. A

Page 1 of 3

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

1

GATE

*Gate

Protection

Diode

RoHS Compliant Product

A Suffix of “-C” specifies halogen & lead-free

DESCRIPTION

Low on-resistance

Fast switching speed

Low voltage drive (2.5V) makes this device ideal for portable equipment

Easily designed drive circuits

Easy to parallel

FEATURES

Simple drive requirement

Small package outline

DEVICE MARKING: KN

PARAMETER

SYMBOL

RATING

UNIT

Drain – Source Voltage

30

V

Gate – Source Voltage

±20

V

Continuous Drain Current

100

mA

Pulsed Drain Current (tp≦10

µS)

400

mA

Power Dissipation *

200

mW

Operating Junction & Storage Temperature Range

150, -55~150

°C

Note: With each pin mounted on the recommended lands.

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITION

STATIC CARACTERISTICS

Drain-Source Breakdown Voltage

30

-

-

V

µA

Gate-Threshold Voltage

0.8

-

1.5

V

µA

Gate-Source Leakage Current

-

-

±1.0

µA

Drain-Source Leakage Current

-

-

1.0

µA

-

5.0

8.0

Static Drain-Source On-Resistance

-

7.0

13

Forward Transconductance

20

-

-

ms

DYNAMIC CHARACTERISTICS

Input Capacitance

-

13

-

Output Capacitance

-

9

-

Reverse Transfer Capacitance

-

4

-

pF

f=1MHz

SWITCHING CHARACTERISTICS

Turn-on Delay Time

-

15

-

Rise Time

-

35

-

Turn-off Delay Time

-

80

-

Fall Time

-

80

-

nS

SOT-323

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.80

2.20

G

0.100 REF.

B

1.80

2.45

H

0.525 REF.

C

1.15

1.35

J

0.08

0.25

D

0.80

1.10

K

-

-

E

1.20

1.40

L

0.650 TYP.

F

0.20

0.40