SSM0410

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

11-May-2010 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A Suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSM0410 provide the designer with best combination of fast switching,

ruggedized device design, low on resistance and cost-effectiveness.

The SOT-223 package is universally preferred for all commercial-industrial surface

mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES



Fast Switching



Low On-resistance



Logic Level Compatible

MARKING

PARAMETER

SYMBOL

RATING

UNIT

Drain – Source Voltage

100

V

Gate – Source Voltage

±20

V

Continuous Drain Current

3.5

A

2.2

A

Pulsed Drain Current

1,2

14

A

Total Power Dissipation

2.7

W

Linear Derating Factor

0.02

W/°C

Operating Junction & Storage Temperature Range

-65~150

°C

THERMAL DATA

Maximum Junction–Ambient

3

45

°C/W

SOT-223

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

6.20

6.70

G

-

0.10

B

6.70

7.30

H

-

-

C

3.30

3.70

J

0.25

0.35

D

1.42

1.90

K

-

-

E

4.50

4.70

L

2.30 REF.

F

0.60

0.82

M

2.90

3.10

Top View

1

2

3

4

A

M

B

D

L

K

F

G

H

J

E

C

Gate

Source

Drain