SSP7421P datasheet(2/2 Pages) SECOS

2 / 2 page

SSP7421P

-20 A, -20 V, RDS(ON) 8.4 m

P-Channel Enhancement MOSFET

Elektronische Bauelemente

27-Jul-2010 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

PARAMETER

SYMBO MIN TYP MAX UNIT

TEST CONDITIONS

Static

Gate-Threshold Voltage

VGS(th)

-0.4

VDS = VGS, ID = -250μA

Gate-Body Leakage

IGSS

100

VDS = 0V, VGS= ±8V

Zero Gate Voltage Drain Current

IDSS

-1

μA

VDS = -16V, VGS= 0V

-5

VDS = -16V, VGS= 0V, TJ=55°C

On-State Drain Current

ID(ON)

-50

VDS = -4.5V, VGS= -10V

Drain-Source On-Resistance

RDS(ON)

8.4

mΩ

VGS= -4.5V, ID = -13.5A

10.4

VGS= -2.5V, ID = -12A

Forward Transconductance

gFS

VDS= -15V,,ID = -11.5A

Diode Forward Voltage

VSD

-0.6

IS= 2.5A, VGS= 0V

Dynamic

Total Gate Charge

ID= -13.5A

VDS= -10V

VGS= -4.5V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

Td(ON)

ID= -1A, VDD= -10V

VGEN= -4.5V

RL= 6Ω

Rise Time

Turn-Off Delay Time

Td(OFF)

289

Fall Time

134

Notes

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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