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SML1001RHN Datasheet(PDF) 2 Page - Seme LAB |
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SML1001RHN Datasheet(HTML) 2 Page - Seme LAB |
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2 / 2 page ![]() SML1001RHN SML901RHN0 Prelim. 7/98 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Characteristic Test Conditions. Min. Typ. Max. Unit Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic / Test Conditions. Part Number Min. Typ. Max. Unit 10 40 1.3 320 636 1200 2.2 4.5 9 IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current1 (Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge VGS = 0V IS = – ID [Cont.] IS = – ID [Cont.] dls / dt = 100A/ms A A V ns µC Characteristic / Test Conditions / Part Number Min. Typ. Max. Unit 250 250 40 SOA1 SOA2 ILM VDS = 0.4 VDSS , IDS = PD / 0.4 VDSS , t = 1 Sec IDS = IDS [Cont.] , VDS = PD / ID [Cont.] , t = 1 Sec Safe Operating Area Safe Operating Area Inductive Current Clamped W A Characteristic / Test Conditions. Min. Typ. Max. Unit 0.50 40 RqJC Junction to Case Junction to Ambient °C/W °C/W DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS SAFE OPERATING AREA CHARACTERISTICS THERMAL CHARACTERISTICS (Tcase =25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380 µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge3 Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time VGS = 0V VDS = 25V f = 1MHz VGS = 10V ID = ID [Cont.] VDD = 0.5 VDSS VDD = 0.5 VDSS ID = ID [Cont.] VGS = 15V RG = 1.8W pF nC ns 2460 2950 360 500 105 160 90 130 9.3 14 47 70 15 30 16 32 64 95 24 48 |
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