VP1008CSM4

Prelim. 9/99

Website: http://www.semelab.co.uk

Drain – Source Voltage

Gate – Source Voltage

Continuous Drain Current

Pulsed Drain Current 1

Power Dissipation

Maximum Junction and Storage Temperature Range

100V

"

30V

300mA

195mA

3A

400W

160W

150°C

MECHANICAL DATA

Dimensions in mm (inches)

1

2

3

4

5.59 ± 0.13

(0.22 ± 0.005)

0.23

(0.009)

rad.

1.02 ± 0.20

(0.04 ± 0.008)

2.03 ± 0.20

(0.08 ± 0.008)

1.40 ± 0.15

(0.055 ± 0.006)

0.25 ± 0.03

(0.01 ± 0.001)

0.23

(0.009)

min.

P–CHANNEL

ENHANCEMENT MODE

MOSFET

LCC3 PACKAGE

Underside View

NOTE:

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

PAD 1 - Drain

PAD 2 - N/C

PAD 3 - Source

PAD 4 - Gate

The VP1008CSM4 is a general purpose

P-Channel enhancement mode mosfet in

a Ceramic Surface Mount package

designed for high rel applications:

FEATURES

• Hermetic Surface Mount Package

• Screening Option Available