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MS862C08 Datasheet(PDF) 1 Page - Fuji Electric |
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MS862C08 Datasheet(HTML) 1 Page - Fuji Electric |
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1 / 5 page ![]() 1 MS862C08 (80V, 10A) Low IR Schottky Barrier Diode Features • Low IR • Low VF • Center tap connection Applications • High frequency operation • DC-DC converters • AC adapter Maximum Ratings and Characteristics Maximum ratings (at Ta=25˚C Unless otherwise specified) Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM 80 V Average output current IO Square wave duty =1/2 Tc =115˚C 10 * A Non-repetitive surge current ** IFSM Sine wave, 10ms 1shot 125 A Operating junction temperature Tj 150 ˚C Storage temperature Tstg -40 to +150 ˚C *Out put current of center tap full wave connection. **Rating per element Electrical characteristics (at Ta=25˚C Unless otherwise specified) Item Symbols Conditions Maximum Units Forward voltage*** VF IF = 5 A 0.76 V Reverse current*** IR VR =VRRM 150 µA Thermal resistance Rth(j-c) Junction to case 3 ˚C/W ***Rating per element Outline Drawings [mm] Connection diagram TFP http://www.fujisemi.com FUJI Diode Mechanical characteristics Item Conditions Ratings Units Approximate mass 0.8 g |
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