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MMBTA64 Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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MMBTA64 Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  2008. 8. 29 1/2 SEMICONDUCTOR TECHNICAL DATA MMBTA63/64 EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 5 GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATING (Ta=25 ) DIM MILLIMETERS 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 M E 1 2 3 B 1.30 MAX LL PP P7 + _ ELECTRICAL CHARACTERISTICS (Ta=25 ) *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% * : Package Mounted On 99.5% Alumina 10 8 0.6mm. TYPE MMBTA63 MMBTA64 MARK AGX AFX CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage V(BR)CES IC=-0.1mA, IB=0 -30 - - V Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -0.1 A Emitter Cut-off Current IEBO VEB=-10V, IC=0 - - -0.1 A DC Current Gain MMBTA63 hFE(1) IC=-10mA, VCE=-5V 5,000 - - MMBTA64 10,000 - - MMBTA63 hFE(2) IC=-100mA, VCE=-5V 10,000 - - MMBTA64 20,000 - - Collector-Emitter Saturation Voltage MMBTA63/64 VCE(sat) IC=-100mA, IB=-0.1mA - - -1.5 V Base Emitter Voltage MMBTA63/64 VBE IC=-100mA, VCE=-5V - - -2.0 V Current Gain Bandwith Product MMBTA63/64 fT IC=-10mA, f=100MHz VCE=-5V 125 - - MHz MARK SPEC Type Name Marking Lot No. AX CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage MMBTA63/64 VCBO -30 V Collector-Emitter Voltage MMBTA63/64 VCES -30 V Emitter-Base Voltage VEBO -10 V Collector Current DC IC -500 mA Pulse ICP -1 A Collector Power Dissipation PC * 350 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 |
Similar Part No. - MMBTA64 |
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Similar Description - MMBTA64 |
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