Copyright © 1997-2011 ROHM CO.,LTD.

Outline

9.8x15.4(t=4.4)

Dimensions

[ Product description ]

Switching loss reduced, enabling high-speed switching . (2-pin package)

• Shorter recovery time

• Reduced temperature dependence

• High-speed switching possible

Features

Product specifications

Absolute maximum ratings (Ta=25ºC)

Rated parameters

Standard value

Conditions

Repetitive peak reverse voltage V

600

Reverse voltage(DC) V

600

Average rectified forward current I

10

Forward current surge peak I

40 60Hz/1cyc

Junction temperature Tj(ºC)

150

Storage temperature Tstg(ºC)

-55 to +150

*The contents described here are just outline for introduction.

Please obtain the specification sheets from us for thorough check before use.

SiC Schottky Barrier Diodes

SCS110AG

Equivalent circuit

diagram

Page 1 of 1

SCS110AG | SiC Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD.

2/16/2011

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