MMBT2222AW datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

MMBT2222AW

NPN Silicon

General Purpose Transistor

20-Oct-2009 Rev. C

Page 2 of 4

ELECTRICAL CHARACTERISTICS at Ta = 25°C

CHARACTERISTIC

TEST CONDITION

SYMBOL

MIN.

MAX.

UNIT

Collector-Base Breakdown Voltage

IC=10μA, IE=0

V(BR)CBO

Collector-Emitter Breakdown Voltage

IC = 10 mA, IB = 0

V(BR)CEO

Emitter=Base Breakdown Voltage

IE=-10μA, IC=0

V(BR)EBO

Collector Cutoff Current

VCB=70V, IE=0

ICBO

100

Collector Cutoff Current

VEB=35V, IC=0

ICEO

100

Emitter Cutoff Current

VEB=3V, IC=0

IEBO

100

VCE=10V, IC=-0.1mA

hFE1

VCE=10V, IC=1mA

hFE2

VCE=10V, IC=10mA

hFE3

VCE=10V, IC=150mA

hFE4

100

300

VCE=10V, IC=500mA

hFE5

DC Current Gain

VCE=1V, IC=500mA

hFE6

IC=500mA, IB=50mA

VCE(sat)

Collector-emitter Saturation Voltage

IC=150mA, IB=15mA

VCE(sat)

0.3

IC=500mA, IB=50mA

VBE(sat)

2.0

Base-Emitter Saturation Voltage

IC=150mA, IB=15mA

VBE(sat)

1.2

Transition Frequency

VCE=20V, IC=20mA, f=1MHz

300

MHz

Output Capacitance

VCB=10V, IE=0, f=1MHz

Cob

Delay Time

Rise Time

Vcc=30V, VBE(Off)=-0.5V

IC=150mA, IB1=15mA

Storage Time

225

Fall Time

Vcc=30V, IC=150mA

IB1=- IB2 =15mA

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