MMBT3906 datasheet(1/5 Pages) SECOS

Part #	MMBT3906

Description	-200 mA, -40 V PNP Plastic Encapsulated Transistor

PDF	5 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 5 page

MMBT3906

-200 mA, -40 V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

30-Aug-2010 Rev. D

Page 1 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3



Base



Emitter

Collector



RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES



Collector current capability IC=-200mA



Collector-emitter voltage VCEO=-40V.

APPLICATION



General switching and amplification.

PACKAGING DIMENSION

MARKING

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector - Emitter Voltage

VCEO

-40

Vdc

Collector - Base Voltage

VCBO

-40

Vdc

Emitter - Base Voltage

VEBO

-5.0

Vdc

Collector Current - Continuous

IC

-200

mAdc

Total Device Dissipation FR-5 Board

(1), TA=25°C

PD

225

mW

Total Device Dissipation FR-5 Board, Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C / W

Total Device Dissipation Alumina Substrate

(2), TA=25°C

PD

300

mW

Total Device Dissipation Alumina Substrate, Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambien

RθJA

417

°C / W

Junction, Storage Temperature

TJ, TSTG

-55 ~ +150

°C

SOT-23

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

2.80

3.00

G

0.10 REF.

B

2.25

2.55

H

0.55 REF.

C

1.20

1.40

J

0.08

0.15

D

0.90

1.15

K

0.5 REF.

E

1.80

2.00

L

0.95 TYP.

F

0.30

0.50

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