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MP6K13 Datasheet(PDF) 1 Page - Rohm |
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MP6K13 Datasheet(HTML) 1 Page - Rohm |
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1 / 7 page ![]() Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4V Drive Nch + Nch MOSFET MP6K13 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High power package(MPT6). 3) Low voltage drive(4V drive). Application Switching Packaging specifications Inner circuit Package Taping Code TR Basic ordering unit (pieces) 1000 MP6K13 Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 6.0 A Pulsed IDP 12 A Continuous Is 1.6 A Pulsed Isp 12 A 2.0 W / TOTAL 1.4 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw 10s, Duty cycle1% *2 Mounted on a ceramic board. PD Type Source current (Body Diode) Drain current Parameter Power dissipation MPT6 (Duel) (1) (2) (3) (6) (5) (4) *2 *1 *1 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗ 1 ESD PROTECTION DIODE ∗ 2 BODY DIODE ∗2 ∗2 ∗1 ∗1 (1) (2) (3) (6) (5) (4) 1/6 2011.03 - Rev.A |
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