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BAS70 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BAS70 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() Dimensions in inches and (millimeters) - 14 - Features Low turn-on voltage Fast switching PN junction guard Ring for transient and ESD protection Mechanical Data Case: SOT-23, Molded plastic Terminals: Solderable per MIIL-STD-202, Method 208 Marking & Polarity: See diagram Weight: 0.008 grams Maximum Ratings TA=25 oC unless otherwise specified Type Number Symbol BAS70 Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 70 V RMS Reverse Voltage VR(RMS) 49 V Forward Continuous Current (Note 1) IF 70 mA Non-Repetitive Peak Forward Surge Current @ t ≦1.0s IFSM 100 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance Junction to Ambient Air (Note 1) RθJA 625 K/W Operating Junction Temperature Range TJ -55 to + 125 oC Storage Temperature Range TSTG -65 to + 150 oC Electrical Characteristics Type Number Symbol Min Max Units Reverse Breakdown Voltage (Note 2), IR=10uA V(BR) 70 Reverse Leakage Current tp<300us, VR=50V IR _ 100 nA Forward Voltage Drop tp=300us, IF=1.0mA tp<300us, IF=15mA VF _ 410 1000 mV Junction Capacitance VR=0, f=1.0MHz Cj _ 2.0 pF Reverse Recovery Time (Note 3) trr _ 5.0 nS Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature. 2. Test Period < 3000uS. 3. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=1.0mA, RL=100 Ω. Version: C07 BAS70 / -04 / -05 / -06 200m Watts Surface Mount Schottky Barrier Diode SOT-23 0.020(0.51) 0.015(0.37) 0.055(1.40) 0.047(1.19) 0.098(2.50) 0.083(2.10) 0.024(0.61) 0.018(0.45) 0.007(0.178) 0.003(0.076) 0.024(0.61) 0.018(0.45) 0.080(2.05) 0.070(1.78) 0.041(1.05) 0.047(0.89) 0.120(3.05) 0.104(2.65) 0.006(0.15) 0.001(0.013) 0.043(1.10) 0.035(0.89) BAS70-05Marking:75 BAS70-06Marking:76 BAS70-04Marking:74 BAS70Marking:73 |
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