TSM2N60

600V N-Channel Power MOSFET

1/8

Version: E11

TO-220

TO-251

(IPAK)

TO-252

(DPAK)

General Description

The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a

fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters

and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage

transients.

Features

●

Robust high voltage termination

●

Avalanche energy specified

●

Diode is characterized for use in bridge circuits

●

Source to Drain diode recovery time comparable to a

discrete fast recovery diode.

Ordering Information

Part No.

Package

Packing

TSM2N60CP RO

TO-252

2.5Kpcs/ 13” Reel

TSM2N60CH C5

TO-251

75pcs / Tube

TSM2N60CZ C0

TO-220

50pcs / Tube

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Continuous Drain Current

2

A

Pulsed Drain Current

9

A

Continuous Source Current (Diode Conduction)

a,b

1

A

Single Pulse Drain to Source Avalanche Energy

EAS

20

mJ

Maximum Power Dissipation @ Tc = 25

TO-251 / TO-252

70

W

TO-220

70

Operating Junction Temperature

+150

Operating Junction and Storage Temperature Range

-55 to +150

PRODUCT SUMMARY

600

1

Pin Definition:

1. Gate

2. Drain

3. Source

Block Diagram

N-Channel MOSFET